 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type 200V P-Channel MOSFET KQB12P20 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features -11.5A, -200V, RDS(on) = 0.47 Low gate charge ( typical 31 nC) @VGS = -10 V 100% avalanche tested + .2 5 .2 8 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Improved dv/dt capability 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 Fast switching + .2 8 .7 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Drain Current Continuous TC=25 Drain Current Continuous TC=100 Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power dissipation @ Ta=25 Power dissipation @ Tc=25 Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient * Thermal Resistance Junction to Ambient TJ, TSTG TL R R R JC JA JA Symbol VDSS ID (Note 1) IDM VGSS EAS IAR EAR dv/dt Rating -200 -11.5 -7.27 -46 30 810 -11.5 12 -5.5 3.13 Unit V A A A V mJ A mJ V/ns W W W/ (Note 1) (Note 1) (Note 3) PD 120 0.96 -55 to 150 300 1.04 40 62.5 /W /W /W * When mounted on the minimum pad size recommended (PCB Mount) 5 .6 0 Low Crss ( typical 30pF) 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KQB12P20 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.2mH, IAS = -11.5A, VDD = -50V, RG = 25 3. ISD -11.5A, di/dt 300A/ s, VDD , Starting TJ = 25 IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr VGS = 0 V, IS = -11.5 A VGS = 0 V, IS = -11.5 A, dIF / dt = 100 A/ s (Note 4) VDS = -160 V, ID = -11.5 A,VGS = -10 V(Note4,5) VDD = -100V, ID = -11.5 A,RG = 25 (Note4,5) VDS = -25 V, VGS = 0 V,f = 1.0 MHz Symbol BVDSS Testconditons VGS = 0 V, ID = -250 ID = -250 A Transistors IC Min -200 Typ Max Unit V V/ A, Referenced to 25 -1 -10 -100 100 A -3.0 0.36 6.4 920 190 30 20 195 40 60 31 8.1 16 -11.5 -46 -5.0 180 1.44 1200 250 40 50 400 90 130 40 -5.0 0.47 VDS = -200 V, VGS = 0 V VDS = -160V, TC=125 VGS = -30 V, VDS = 0 V VGS = 30V, VDS = 0 V VDS = VGS, ID = -250 A A nA nA V VGS = -10 V, ID = -5.75A VDS = -40 V, ID = -5.75A S pF pF pF ns ns ns ns nC nC nC A A V ns c BVDSS, Starting TJ = 25 2% 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature 2 www.kexin.com.cn |
Price & Availability of KQB12P20
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |